1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 2SD780/2SD780a transistor (npn) features power dissipation p cm: 0.2 w (tamb=25 ) collector current i cm: 0.3 a collector-base voltage v (br)cbo : 60 v 2SD780 v (br)cbo : 80 v 2SD780a operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 0.1 ma, i e =0 2SD780 2SD780a 60 80 v collector-emitter breakdown voltage v (br)ceo ic= 1 mai b =0 2SD780 2SD780a 60 80 v emitter-base breakdown voltage v (br)ebo i e = 0.1m a, i c =0 5 v collector cut-off current i cbo v cb = 50 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v, i c =0 0.1 a h fe(1) v ce = 1 v, i c = 50 ma 110 400 dc current gain h fe(2) v ce = 2 v, i c = 300 ma 30 collector-emitter saturation voltage v ce(sat) i c = 300 ma, i b = 30 ma 0.6 v base-emitter voltage v be v ce = 6 v, i c = 10 ma 0.6 0.7 v transition frequency f t v ce = 6 v, i c = 10 ma 140 mhz collector output capacitance c ob v cb = 6 v, i e =0, f= 1 mhz 7 pf classification of h fe(1) rank range 110-180 135-220 170-270 200-320 250-400 2SD780 dw1 dw2 dw3 dw4 dw5 marking 2SD780a d51 d52 d53 d54 d55 sot-23-3l 1. base 2. emitter 3. collector 2SD780/2SD780a http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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